(China (Mainland))
Product Summary
The STD5NM50T4 is a N-channel 500V-0.7Ω-7.5A DPAK/IPAK MDmesh power MOSFET. It is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Parametrics
Absolute maximum ratings: (1)VDS, Drain-source Voltage (VGS = 0): 500V; (2)VDGR, Drain-gate Voltage (RGS = 20 kΩ): 500V; (3)VGS, Gate- source Voltage: ±30V; (4)ID, Drain Current (continuous) at TC = 25℃: 7.5A; (5)ID, Drain Current (continuous) at TC = 100℃: 4.7A; (6)IDM (·), Drain Current (pulsed): 30A; (7)PTOT, Total Dissipation at TC = 25℃: 100W; (8)Derating Factor: 0.8W℃; (9)dv/dt, Peak Diode Recovery voltage slope: 15V/ns; (10)Tstg, Storage Temperature: – 55 to 150℃; (11)Tj, Max. Operating Junction Temperature: – 55 to 150℃.
Features
Features: (1)typical RDS(on) = 0.7Ω; (2)high dv/dt and avalanche capabilities; (3)100% avalanche tested; (4)low input capacitance and gate charge; (5)low gate input resistance; (6)tight process control and high manufacturing yields.
Diagrams
| Image | Part No | Mfg | Description |  |
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 STD5NM50T4 |
STMicroelectronics |
MOSFET N-Ch 500 Volt 7.5 A |
Data Sheet |
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