Product Summary
The MW7IC18100NBR wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2050 MHz. This multi -stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations including GSM EDGE and CDMA.
Parametrics
Absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -0.5 to +65Vdc; (2)Gate-Source Voltage, VGS: -0.5 to +6Vdc; (3)Storage Temperature Range, Tstg: -65 to +200℃; (4)Operating Junction Temperature, TJ: 200℃.
Features
Features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source Scattering Parameters; (2)On-Chip Matching (50 Ohm Input, DC Blocked); (3)Integrated Quiescent Current Temperature Compensation with Enable/Disable Function; (4)Integrated ESD Protection; (5)200℃ Capable Plastic Package; (6)RoHS Compliant; (7)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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MW7IC18100NBR1 |
Freescale Semiconductor |
RF Amplifier HV7 1990MHZ |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
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MW7IC008NT1 |
Freescale Semiconductor |
RF Amplifier HV7 900MHZ 8W PQFN8X8 |
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MW7IC18100GNR1 |
Freescale Semiconductor |
RF Amplifier HV7 1990MHZ |
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Negotiable |
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MW7IC18100NBR1 |
Freescale Semiconductor |
RF Amplifier HV7 1990MHZ |
Data Sheet |
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MW7IC18100NR1 |
Freescale Semiconductor |
RF Amplifier HV7 1990MHZ |
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MW7IC2020NT1 |
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MW7IC2040GNR1 |
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